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| Preliminary VGS Semiconductor STK0380P Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features * * * * High Voltage: BVDSS=800V(Min.) Low Crss : Crss=5.0F(Typ.) Low gate charge : Qg=18nC(Typ.) Low RDS(on) :RDS(on)=4.8(Max.) Ordering Information Type NO. STK0380P Marking STK0380 Package Code TO-220AB-3L Outline Dimensions 3.70 Max. 9.80~10.20 unit : mm 15.35~16.05 12.80~13.00 9.05~9.35 1.37 Max. 12.68~13.48 1.62 Max. 0.90 Max. 2.54 Typ. 2.54 Typ. 0.60 Max. 2.60 Max. 3.00 Typ. 4.35~4.65 PIN Connections 1. Gate 2. Drain 3. Source Preliminary 1 Preliminary STK0380P Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25C) Symbol VDSS VGSS ID TC=25 TC=100 IDM PD IAS EAS IAR EAR TJ Tstg Rating 800 30 3.0 1.9 12 107 3 320 12 10.7 150 -55~150 Unit V V A A A W A mJ A mJ C C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max 1.17 62.5 Unit /W Preliminary 2 Preliminary STK0380P Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Tc=25C) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250 , VGS=0V ID=250 , VGS= VDS VDS=800V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=1.5A VDS=50V, ID=1.5A VGS=0V, VDS=25V f=1 MHz Min. Typ. Max. 800 3.0 4.0 3 562 50 5.0 15 43.5 22.5 32 18 3.4 5.9 5.0 10 100 4.8 705 70 7.5 40 95 55 75 21.5 - Unit V V S VDD=400V, ID=3.0A RG=25 - VDS=640V, VGS=10V ID=3.0A - - nC Source-Drain Diode Ratings and Characteristics Characteristic Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge (Tc=25C) Symbol IS ISP VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=3.0A IS=3.0A, VGS=0V dIS/dt=100A/ Min - Typ 642 4.0 Max 3.0 12 1.4 - Unit A V C Note ; Repetitive rating : Pulse width limited by maximum junction temperature L=67mH, IAS=3.0A, VDD=50V, RG=25 Pulse Test : Pulse width 300 , Duty cycle 2% Essentially independent of operating temperature Preliminary 3 Preliminary STK0380P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. Preliminary 4 |
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